Hall Effect Calculator

Find Hall voltage V_H = BI/(nqt)

Parameters

Aⓘ
Tⓘ
mⓘ
m⁻³ⓘ
Cⓘ
Show Trail

Controls

xⓘ

Calculated Values

Hall Voltage:
0.00;V0.00;V

Examples

I=10 A, B=0.5 T

Copper-like n.

    Visualization

    Hall Effect

    When current flows through a flat conductor in a magnetic field B perpendicular to the current, magnetic force deflects charge carriers to one side. Charge accumulation creates a transverse electric field (Hall field) until magnetic and electric forces on drifting carriers balance: qE_H = qv_d B.

    The Hall voltage across thickness t is V_H = E_H × t = (v_d B) × t. Using current I = nqAv_d with cross-sectional area A = width × t gives the standard formula V_H = BI/(nqt), where n is carrier number density and q is carrier charge.

    Sign of V_H reveals carrier type: electrons (negative q) give opposite Hall polarity to holes (positive q). Measuring V_H with known I, B, t, and n determines q or verifies semiconductor doping type.

    Hall probes measure B by known geometry and calibration. Solid-state Hall sensors (GaAs, InSb) are in keyboards, brushless motor commutation, anti-lock braking wheel speed sensors, and phone flip covers.

    In metals n is very large (~10²⁸ m⁻³) so V_H is tiny; semiconductors give larger, measurable V_H. Quantum Hall effect (2D electron gas, low T, high B) shows quantized V_H plateaus — fundamental constant measurement.

    Example: I = 10 A, B = 0.5 T, t = 1 mm, n = 8.5×10²⁸ m⁻³ (copper-like) gives V_H on order 10⁻¹⁰ V — why Hall sensors use doped semiconductors instead.

    Key Concepts

    • V_H = BI/(nqt)
    • Balance: qE_H = qv_d B
    • Sign → electron vs hole
    • Hall probe measures B
    • n = carrier density
    • Quantum Hall at extreme conditions

    Real-World Applications

    • Hall-effect magnetic sensors
    • Brushless motor position
    • Material carrier characterization
    • Current transducers
    • Automotive wheel speed
    • Class 12 advanced reading

    Explore Further

    More magnetism tools

    Physics Equations

    Hall Voltage:
    VH=BInqtV_H = \frac{BI}{nqt}

    Step-by-Step Solution

    See how the main results are calculated.

    1

    Step 1: Hall Effect Setup

    Current I in slab, B perpendicular → Lorentz force deflects carriers.

    Explanation:

    Charge piles up on one face until Hall field balances magnetic force.

    2

    Step 2: Equilibrium Condition

    Equation:

    qEH=qvdB⇒EH=vdBqE_H = qv_d B \Rightarrow E_H = v_d B

    Explanation:

    v_d = drift velocity of carriers.

    3

    Step 3: Hall Voltage Formula

    Equation:

    VH=BInqtV_H = \frac{BI}{nqt}

    Explanation:

    n = carrier number density, t = slab thickness, q = carrier charge.

    4

    Step 4: Substitute

    Calculation:

    VH=0.5×108.5000e+28×1.6000e−19×0.001V_H = \frac{0.5 \times 10}{8.5000e+28 \times 1.6000e-19 \times 0.001}

    Explanation:

    Check units: (T·A)/(m⁻³·C·m) = V.

    5

    Step 5: Result

    Calculation:

    VH=3.6765e−7 V,EH=VHt=3.6765e−4 V/mV_H = 3.6765e-7\ \text{V},\quad E_H = \frac{V_H}{t} = 3.6765e-4\ \text{V/m}

    Result:

    VH=3.6765e−7VV_H = 3.6765e-7 V
    6

    Step 6: Sign and Applications

    Polarity reveals electron vs hole conduction.

    Explanation:

    Hall probes measure B; used in position sensors and smartphones.

    Frequently Asked Questions (FAQ)

    Metals vs semiconductors?

    Semiconductors often larger Hall voltage due to lower n.

    AC current?

    Hall voltage follows I(t) and B(t) product.

    Practice MCQs

    1. Hall voltage:
    2. Doubling B:
    3. Hall effect measures:
    4. Electrons in n-type semiconductor:
    5. Thicker sample t:
    6. Hall sensor advantage: